Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect
نویسندگان
چکیده
منابع مشابه
Improving the Linearity and Efficiency of RF Power Amplifiers
Agrowing number of semiconductor technologies are being applied to RF power transistor applications. These technologies include Si LDMOS FET, SiGe HBT, InGaP HBT, GaAs MESFET, AlGaAs pHEMT, SiC MESFET and AlGaN/GaN HEMT. The dependencies of linearity and efficiency of such technologies are often common, such as transconductance derivatives, capacitance variations, breakdown effects and parasiti...
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ژورنال
عنوان ژورنال: Active and Passive Electronic Components
سال: 2019
ISSN: 0882-7516,1563-5031
DOI: 10.1155/2019/8425198